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1 MRF372 MRF372r5 motorola rf device data the rf mosfet line rf power field?effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 32 volt transmitter equipment. ? typical narrowband two - tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 17 db efficiency ? 36% imd ? - 35 dbc ? typical broadband two - tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 14.5 db efficiency ? 37% imd ? - 31 dbc ? internally matched, controlled q, for ease of use ? integrated esd protection ? 100% tested for load mismatch stress at all phase angles with 3:1 vswr @ 32 vdc, f1 = 857 mhz, f2 = 863 mhz, 180 watts pep ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? available in tape and reel. r5 suffix = 50 units per 56 mm, 13 inch reel. maximum ratings (1) rating symbol value unit drain - source voltage v dss 68 vdc gate - source voltage v gs - 0.5, +15 vdc drain current - continuous i d 17 adc total device dissipation @ t c = 25 c derate above 25 c p d 350 2.0 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.5 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) (1) each side of device measured separately. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF372/d motorola semiconductor technical data 470 - 860 mhz, 180 w, 32 v lateral n - channel rf power mosfet case 375g - 04, style 1 ni - 860c3 MRF372 MRF372r5 ? motorola, inc. 2004 rev 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF372 MRF372r5 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain - source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 68 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.5 4.5 vdc drain - source on - voltage (v gs = 10 v, i d = 3 a) v ds(on) ? 0.28 0.45 vdc forward transconductance (v ds = 10 v, i d = 3 a) g fs ? 2.6 ? s dynamic characteristics (1) input capacitance (includes input matching capacitance) (v ds = 32 v, v gs = 0 v, f = 1 mhz) c iss ? 260 ? pf output capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c oss ? 69 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c rss ? 2.5 ? pf functional characteristics, narrowband operation (in motorola MRF372 narrowband circuit, 50 ohm system) (2) common source power gain (v dd = 32 v, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 16 17 ? db drain efficiency (v dd = 32 v, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) 33 36 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? -35 -31 dbc output mismatch stress (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz, v swr = 3:1 at all phase angles of test) no degradation in output power typical characteristics, broadband operation (in motorola MRF372 broadband circuit, 50 ohm system) (2) common source power gain (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) g ps ? 14.5 ? db drain efficiency (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) ? 37 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? -31 ? dbc (1) each side of device measured separately. (2) measured in push - pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF372 MRF372r5 motorola rf device data typical characteristics figure 1. capacitance versus voltage v ds , drain?source voltage (volts) , c iss , capacitance (pf) note: c iss does not include input matching capacitance. 0 50 100 150 200 0 5 10 15 20 0 102030405060 c oss c iss c rss c oss , capacitance (pf) c rss f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF372 MRF372r5 4 motorola rf device data figure 2. 860 mhz narrowband dc bias networks v gg v dd l4 r4 r5 l2 r3 gate drain l3 r1 c5 c3 + r2 l1 c8 c7 c12 c10 table 1. 860 mhz narrowband dc bias networks component designations and values designation description c1 f, 22 v tantalum chip capacitors, kemet #t491d226k22as f, 100 v chip capacitors, vitramon #vj3640y105kxbat f, 100 v chip capacitors, vitramon #vj3640y225kxbat f, 100 v chip capacitors, kemet #vj1210y103kxbat r1a, b, r2a, b r4a, b, r5a, b 180 ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/8 w chip resistors, vishay dale (1206) pcb MRF372 printed circuit board rev 1a, rogers ro4350, height 30 mils, r = 3.48 r = 10.2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF372 MRF372r5 motorola rf device data r4b pcb substrate (30 mil thick) motorola vertical 860 mhz balun rogers ro3010 (50 mil thick) 55 mil slot cut out to accept balun input (50 ohm microstrip) output 2 (12.5 ohm microstrip) ground vertical balun mounting detail note: trim balun pcb so that a 35 mil "tab" fits into the main pcb slot" resulting in balun solder pads being level with the pcb substrate solder pads when fully inserted. output 1 (12.5 ohm microstrip) MRF372 rev 1a c9 r1a c3a r2a c3b l1b r2b r1b c10b c10a c1 c2 c4a c4b r3a c6 c11 c13 l4b l4a c8a c14a c15 r3b c14b c8b l2b l2a l1a c5a l3b c5b c7a c7b c12a r5a r4a c12b r5b figure 3. 860 mhz narrowband component layout l3a f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF372 MRF372r5 6 motorola rf device data typical two - tone narrowband characteristics figure 4. cofdm performance (860 mhz) p out , output power (watts) avg. figure 5. 8 - vsb performance (860 mhz) p out , output power (watts) avg. figure 6. power gain versus output power p out , output power (watts) pep figure 7. intermodulation distortion versus output power p out , output power (watts) pep figure 8. drain efficiency versus output power p out , output power (watts) pep 0 5 10 15 20 25 30 35 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 10 100 5 10 15 20 25 30 35 40 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 10 100 10 12 14 16 18 20 10 100 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 10 100 5 10 15 20 25 30 35 40 45 10 100 v dd = 32 vdc i dq = 800 ma f1 = 857 mhz f2 = 863 mhz d , drain efficiency (%) 800 ma i dq = 400 ma 1.2 a v dd = 32 vdc f1 = 857 mhz f2 = 863 mhz imd, intermodulation distortion (dbc) 1.6 a 800 ma 1.2 a v dd = 32 vdc f1 = 857 mhz f2 = 863 mhz i dq = 1.6 a g ps , power gain (db) imr, intermodulation ratio (db) , drain efficiency (%) g ps , power gain (db) imr g ps , drain efficiency (%) g ps , power gain (db) imr, intermodulation ratio (db) imr g ps v dd = 32 vdc i dq = 1.6 a 6 db peak/avg. ratio 400 ma v dd = 32 vdc i dq = 1.6 a 2 k mode 64 qam 10 db peak/avg. ratio note: imr measured using delta marker method. note: imr measured using delta marker method. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF372 MRF372r5 motorola rf device data figure 9. narrowband series equivalent input and output impedance f mhz z source ? z load ? 845 860 875 3.99 - j2.50 3.18 - j1.46 3.56 - j1.98 5.63 + j0.38 5.28 + j0.43 4.94 + j0.56 v dd = 32 v, i dq = 800 ma, p out = 180 w pep f ghz z source ? z load ? 1.69 1.72 1.75 2.85 + j14.30 1.23 + j9.37 1.54 + j9.60 1.73 + j9.62 harmonics 3.27 + j14.32 3.35 + j14.36 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + z source z load f = 845 mhz f = 845 mhz f = 875 mhz z o = 10 ? f = 875 mhz f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF372 MRF372r5 8 motorola rf device data + figure 10. 470 - 860 mhz broadband dc bias networks v gg v dd l3 r9a r9b r5 gate drain l2 r6 c9 r7 c7 c18 c17 c16 c8 r2 r3 r4t + table 2. 470 - 860 mhz broadband dc bias networks component designations and values designation description c1 f, 22 v tantalum chip capacitors, kemet #t491d226k22as f, 100 v chip capacitors, vitramon #vj3640y104kxbat f, 35 v tantalum chip capacitors, kemet #t491d106k35as f, 100 v chip capacitors, vitramon #vj3640y335kxbat f chip capacitors, b case, atc ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/8 w chip resistors, vishay dale (1206) ? , thermistor, vishay #nths?1206j14520r5% ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/4 w chip resistors, vishay dale (1210) ? potentiometer, bourns ? , 1/8 w chip resistor, vishay dale (1206) ? , 1/4 w chip resistors, vishay dale (1210) pcb MRF372 printed circuit board rev 1a, rogers ro4350, height 30 mils, r = 3.48 r = 10.2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9 MRF372 MRF372r5 motorola rf device data MRF372 l1a c5 c10 c11 r6a c8a r9a r4ta r3a l2a c15a l3a c16a l1b c14b l2b c15b c16b c14a r6b c14d c12 c13 l3c c17b r3b r2b c1 c3a c3b c4 c6 c7a c7b r4tb r1b r5a r5b r7 r1a c14c c2 c9a c9b r8 r9c r10a r10b c18a c18b c17a r9b c8b r2a l3b r9d rev. 1a figure 11. 470 - 860 mhz broadband component layout pcb substrate (30 mil thick) motorola vertical 660 mhz balun rogers ro3010 (50 mil thick) 55 mil slot cut out to accept balun input (50 ohm microstrip) output 2 (12.5 ohm microstrip) ground vertical balun mounting detail note: trim balun pcb so that a 35 mil tab" fits into the main pcb slot" resulting in balun solder pads being level with the pcb substrate solder pads when fully inserted. output 1 (12.5 ohm microstrip) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF372 MRF372r5 10 motorola rf device data typical two - tone broadband characteristics p out , output power (watts) pep 10 12 14 16 18 20 10 100 figure 12. power gain versus output power figure 13. intermodulation distortion versus output power p out , output power (watts) pep figure 14. drain efficiency versus output power p out , output power (watts) pep g ps = 660 mhz v dd = 32 vdc i dq = 1.0 a f1 ? f2 = 6 mhz ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 10 100 5 10 15 20 25 30 35 40 45 10 100 imd, intermodulation distortion (dbc) g ps , power gain (db) , drain efficiency (%) 860 mhz 470 mhz 660 mhz v dd = 32 vdc i dq = 1.0 a f1 ? f2 = 6 mhz 860 mhz imd = 470 mhz 660 mhz v dd = 32 vdc i dq = 1.0 a f1 ? f2 = 6 mhz d = 860 mhz 470 mhz d f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
11 MRF372 MRF372r5 motorola rf device data figure 15. broadband series equivalent input and output impedance f mhz z source ? z load ? 470 560 660 4.46 - j2.57 7.84 + j0.14 6.40 + j1.06 4.88 - j3.50 5.45 - j0.07 8.13 + j0.73 v dd = 32 v, i dq = 1.0 a, p out = 180 w pep 760 860 6.25 + j0.31 6.67 + j0.46 8.27 - j1.00 7.52 + j0.02 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + z o = 10 ? z source f = 470 mhz f = 860 mhz z load z o = 10 ? f = 470 mhz f = 860 mhz f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF372 MRF372r5 12 motorola rf device data package dimensions case 375g - 04 issue e 1 2 34 5 d q g l k 2x h e f c seating plane notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. dimension h to be measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.140 (28.96) based on 3m screw. 4x b a t dim a min max min max millimeters 1.335 1.345 33.91 34.16 inches b 0.380 0.390 9.65 9.91 c 0.180 0.224 4.57 5.69 d 0.325 0.335 8.26 8.51 e 0.060 0.070 1.52 1.78 f 0.004 0.006 0.10 0.15 g h 0.097 0.107 2.46 2.72 k 0.135 0.165 3.43 4.19 l n 0.851 0.869 21.62 22.07 q 0.118 0.138 3.00 3.30 r 0.395 0.405 10.03 10.29 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source 1.100 bsc 0.425 bsc 27.94 bsc 10.8 bsc j 0.2125 bsc 5.397 bsc m 0.852 0.868 21.64 22.05 s 0.394 0.406 10.01 10.31 bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref m a m bbb b m t m a m bbb b m t b (flange) 4x m a m bbb b m t m a m ccc b m t r (lid) s (insulator) j m a m bbb b m t m a m ccc b m t n (lid) m (insulator) a 4 ni - 860c3 information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors MRF372/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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